As the processes of decarbonization and digitalization accelerate, they bring about multiple transformations such as the Internet of Things, energy efficiency, and future mobility. In this evolution, Silicon Carbide (SiC) and Gallium Nitride (GaN), two "rising stars" in the semiconductor industry, have emerged as key players due to their unique advantages. Let’s take a closer look at third-generation semiconductor materials, represented by SiC and GaN.
Third-generation semiconductor materials, represented by Gallium Nitride (GaN) and Silicon Carbide (SiC), are wide-bandgap semiconductors that are considered the new driving force for the development of the electronics industry today.
These materials possess a range of remarkable properties, including a wider bandgap, higher breakdown electric fields, excellent thermal conductivity, high electron saturation drift velocity, and strong radiation resistance. These characteristics make them ideal for manufacturing high-temperature, high-frequency, and radiation-resistant high-power electronic devices. Currently, third-generation semiconductor materials are widely used in cutting-edge fields such as 5G base station construction, electric vehicles, smart grids, and fast-charging technologies.
The first generation of semiconductor materials, represented by silicon (Si) and germanium (Ge), are indirect bandgap semiconductors, primarily used in discrete devices and chip manufacturing.
The second generation of semiconductor materials consists mainly of compound semiconductors, such as Gallium Arsenide (GaAs) and Indium Antimonide (InSb), which are direct bandgap semiconductors. These materials are used to create high-speed, high-frequency, high-power, and optoelectronic devices. They are excellent materials for microwave and millimeter-wave devices, and have wide applications in fields such as microwave communication, optical communication, satellite communication, optoelectronic devices, lasers, and satellite navigation.
Compared to the first and second generations, third-generation semiconductor materials offer many advantages. For example, SiC is the ideal material for manufacturing high-temperature, high-frequency, and high-power semiconductor devices, as it maintains excellent electrical performance and thermal conductivity even at high temperatures. GaN, with its wide bandgap, high critical field strength, high thermal conductivity, and excellent chemical stability, is considered an ideal material for next-generation power and electrical devices.
We are currently in an era where the first, second, and third-generation semiconductor materials coexist widely. The second generation has not completely replaced the first generation, as each material has its specific application areas and limitations. In practical applications, we often use compatible methods to combine the advantages of all three generations to produce products that meet higher demands. Third-generation wide-bandgap semiconductor materials, with their extensive application potential and superior performance, are expected to break through the development bottlenecks of the first two generations and open a new chapter in semiconductor technology.
Despite the fact that silicon-based semiconductor materials currently dominate the market due to their mature technology and low cost, SiC and GaN, the two third-generation materials, are now entering their prime.
According to Yole’s forecast, the global SiC power semiconductor market will grow from $888 million in 2020 to $17.577 billion by 2030, with a compound annual growth rate (CAGR) of 34.79%. This indicates that while silicon devices will continue to hold a dominant position in the semiconductor market, with an expected market penetration rate of over 80%, the market share of third-generation semiconductor materials is steadily increasing. It is expected that by 2024, their market penetration will exceed 10%, with SiC's market penetration approaching 10% and GaN’s reaching 3%.
This trend reflects the significant performance advantages of third-generation semiconductor materials, especially in high-temperature, high-frequency, and high-power applications. As technology matures and costs decrease, the penetration rate of SiC and GaN devices is expected to further increase. These materials will play an increasingly important role in fields such as new energy vehicles, 5G communications, and industrial electronics. Therefore, while silicon materials will continue to play an important role in the semiconductor market, the rise of SiC and GaN should not be overlooked. They are gradually expanding their footprint in the semiconductor materials domain.
